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| 20 10V 15 5.0V 15 Vds=5V 10 Id (A) Id (A) 4.5V 10 4.0V 5 Vgs=3.5V 0 0 1 2 3 4 5 Vds (Volts) Fig 1: On-Region Characteristics 125C 5 25C 0 2 2.5 3 3.5 4 4.5 5 Vgs (Volts) Figure 2: Transfer Characteristics 2 100 Normalized On-Resistance 90 1.8 1.6 Vgs=10V Id=4.5A Rds(on) (m:) 80 70 60 50 40 30 20 0 5 10 15 20 Id (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage Vgs=10V Vgs=4.5V Vgs=4.5V 1.4 1.2 1 0.8 0 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature Id=3.0A 140 Id=4.5A 120 1.0E+01 1.0E+00 1.0E-01 125C 125C Rds(on) (m:) Is (A) 100 1.0E-02 1.0E-03 25C 80 60 25C 1.0E-04 1.0E-05 40 2 4 6 8 10 Vgs (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 0.0 0.2 0.4 0.6 0.8 1.0 Vsd (Volts) Figure 6: Body-Diode Characteristics 10 8 Vgs (Volts) 6 4 2 0 0 Qg (nC) Figure 7: Gate-Charge Characteristics 10 Vds=30V Id= 4.5A Capacitance (pF) 800 600 Ciss 400 Coss Crss 0 0 10 20 30 40 50 60 Vds (Volts) Figure 8: Capacitance Characteristics 200 100.0 Rds(on) limited 100Ps Id (Amps) 10.0 10ms 1s 1.0 Tj(max.)=150C Ta=25C 0.1 0.1 1 Vds (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 100 10s DC 0.1s 1ms 40 10Ps Power (W) Tj(max.)=150C Ta=25C 30 20 10 0 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) 10 ZTja Normalized Transient Thermal Resistance D=Ton/T Tj,pk=Ta+Pdm.ZTja.RTja RTja=62.5C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 0.1 Pd Ton Single Pulse T 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance 20 -10V 15 -4.5V -4.0V 30 Vds=-5V 25 20 -Id (A) 10 -3.5V 5 Vgs=-3.0V 0 0 1 2 3 4 5 -Vds (Volts) Fig 1: On-Region Characteristics -Id (A) 15 10 125C 5 25C 0 1 1.5 2 2.5 3 3.5 4 -Vgs (Volts) Figure 2: Transfer Characteristics 2 130 Normalized On-Resistance 120 Vgs=-4.5V 1.8 1.6 1.4 1.2 1 0.8 Id=-3.2A Vgs=-10V Rds(on) (m:) 110 100 90 80 70 0 2 4 6 8 10 -Id (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 200 180 160 Id=-3.2 Vgs=-10V Vgs=-4.5V Id=-2.8A 0 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature 1.0E+01 1.0E+00 1.0E-01 Rds(on) (m:) 125C -Is (A) 140 120 100 80 60 2 3 4 5 6 7 8 9 10 25C 125C 1.0E-02 1.0E-03 1.0E-04 1.0E-05 1.0E-06 0.0 0.2 0.4 0.6 0.8 1.0 -Vsd (Volts) Figure 6: Body-Diode Characteristics 25C -Vgs (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 10 Vds=-30V Id=-3.2A 1400 1200 8 -Vgs (Volts) 6 Capacitance (pF) 1000 800 600 400 Coss 200 Ciss 4 2 Crss 0 0 4 8 12 16 20 0 0 10 20 30 40 50 60 -Vds (Volts) Figure 8: Capacitance Characteristics -Qg (nC) Figure 7: Gate-Charge Characteristics 100.0 Tj(max.)=150C, Ta=25C Rds(on) limited 0.1s 1.0 1s 10s 0.1 0.1 1 -Vds (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 100 DC 0 0.001 40 Tj(max.)=150C Ta=25C Power (W) 1ms 10ms 100Ps 30 -Id (Amps) 10.0 20 10 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) 10 ZTja Normalized Transient Thermal Resistance D=Ton/T Tj,pk=Ta+Pdm.ZTja.RTja RTja=62.5C/W 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse Pd 0.1 Ton Single Pulse 0.01 0.00001 T 0.0001 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance 0.001 0.01 100 1000 |
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